Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed

1. Field of the Invention The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part () of the substrate ().

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Bibliographic Details
Main Authors Lunenborg, Meindert Martin, De Coster, Walter Jan August, Inard, Alain, Arnaud, Franck
Format Patent
LanguageEnglish
Published 13.05.2003
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Summary:1. Field of the Invention The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part () of the substrate ().