Semiconductor device with reduced line-to-line capacitance and cross talk noise

1. Field of the Invention A transistor device is disclosed, having an insulating material disposed between the gate electrode and the drain and source lines, wherein the dielectric constant of the insulating material is 3.5 or less. Accordingly, the capacitance between the gate electrode and the dra...

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Bibliographic Details
Main Authors Horstmann, Manfred, Wieczorek, Karsten, Hause, Frederick N
Format Patent
LanguageEnglish
Published 29.04.2003
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Summary:1. Field of the Invention A transistor device is disclosed, having an insulating material disposed between the gate electrode and the drain and source lines, wherein the dielectric constant of the insulating material is 3.5 or less. Accordingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor with decreased cross talk noise.