Semiconductor device
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2001-186606, filed Jun. 20, 2001, the entire contents of which are incorporated herein by reference. A semiconductor device comprises a first conductivity type semiconductor substrate, a...
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| Format | Patent |
| Language | English |
| Published |
22.04.2003
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| Online Access | Get full text |
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| Summary: | This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2001-186606, filed Jun. 20, 2001, the entire contents of which are incorporated herein by reference.
A semiconductor device comprises a first conductivity type semiconductor substrate, a first conductivity type semiconductor layer formed on the substrate, a MISFET formed in a first area of the semiconductor layer, having a drain and source, and a gate electrode formed on a semiconductor layer between the drain and source through a gate insulator, an internal source electrode formed to contact the source and whose surface is covered with an insulating layer, a diode formed in a second area of the semiconductor layer, having a cathode and an anode provided on the cathode, an anode electrode which contacts the anode, a conductive portion piercing the semiconductor layer to electrically connect the internal source electrode and the cathode to the substrate, and a source/cathode electrode formed on the back plane of the substrate and commonly provided as a source electrode of the MISFET and a cathode electrode of the diode. |
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