Method of fabricating a thin film transistor using electromagnetic wave heating of an amorphous semiconductor film

• Main Authors: Aya, Yoichiro, Noguchi, Yukihiro, Ide, Daisuke, Sotani, Naoya
• Format: Patent
• Language: English
• Published: 25.03.2003

1. Field of the Invention A method of fabricating a semiconductor device capable of fabricating a semiconductor device including a polycrystalline semiconductor film having excellent characteristics with a high yield is provided. A first amorphous semiconductor film is formed on a substrate. A conductive film is formed on the first amorphous semiconductor film. The conductive film is irradiated with an electromagnetic wave such as a high-frequency wave or a YAG laser beam thereby making the conductive film generate heat and converting the first amorphous semiconductor film to a first polycrystalline semiconductor film through the heat. Thus, polycrystallization is homogeneously performed without dispersion through the heat from the conductive film irradiated with the electromagnetic wave. Consequently, an excellent first polycrystalline silicon film can be formed with an excellent yield.