Method and composition for polishing by CMP

1. Field of the Invention A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operat...

Full description

Saved in:
Bibliographic Details
Main Authors Thomas, Terence M, Ye, Qianqiu Christine, So, Joseph K, Goldberg, Wendy B, Godfrey, Wade
Format Patent
LanguageEnglish
Published 11.03.2003
Online AccessGet full text

Cover

More Information
Summary:1. Field of the Invention A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. Instead the copper ions replate elsewhere on the interconnects, which reduces the surface roughness of the interconnects.