Semiconductor device and method for manufacturing the same

The present invention relates to a method of manufacturing a semiconductor device having an SOI substrate. A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconducto...

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Bibliographic Details
Main Author	Hirabayashi, Atsuo
Format	Patent
Language	English
Published	25.02.2003
Online Access	Get full text

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