Semiconductor device and method for manufacturing the same
The present invention relates to a method of manufacturing a semiconductor device having an SOI substrate. A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconducto...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
25.02.2003
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| Online Access | Get full text |
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| Summary: | The present invention relates to a method of manufacturing a semiconductor device having an SOI substrate.
A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconductor layer, which is isolated in a form of islands on an SOI substrate. A high-concentration impurity diffused region is formed in such a manner as to surround the p-type channel MOSFET and the n-type channel MOSFET. The high-concentration impurity diffused region has a surface concentration of between 1×10atoms/cmand 5×10atoms/cmfor achieving a desired gettering effect. |
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