Thin film transistor substrate and process for producing the same

• Main Authors: Satou, Takeshi, Takahashi, Takuya, Katou, Tomoya, Kaneko, Toshiki, Ikeda, Hajime
• Format: Patent
• Language: English
• Published: 28.01.2003

The present invention relates to a thin film transistor substrate for use in active matrix liquid crystal display devices or self-emission type display devices such as organic light emitting devices and the like, and especially a thin film transistor substrate using the low temperature polycrystalline Si technique, and a process for producing the same. A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo-W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.