Semiconductor device with reduced source diffusion distance and method of making same

• Main Author: Jerred, Paul Antony
• Format: Patent
• Language: English
• Published: 21.01.2003

1. Field of the Invention A semiconductor device comprising a drain region, a body region overlying the drain region and defining an upper surface, source regions extending from adjacent the upper surface of the body region towards the drain region, and a series of indentations extending into and through the body region such that lower side walls of each indentation are defined by portions of the body and drain regions and upper side walls of each indentation are defined by the source region. A lower portion of each indentation is filled with a gate region isolated from the side walls by a first insulating layer and covered by a second insulating layer. A source conductor overlies the upper surface and is electrically connected to the source regions, and a gate conductor is electrically connected to each gate region. The source conductor extends into all upper portion of each indentation to contact portions of the upper side Walls of the indentation which are defined by the source regions.