Method of manufacturing a semiconductor device
The present invention relates to a method of manufacturing a semiconductor device having isolating oxide layers. A method of manufacturing semiconductor device is provided which can minimize the thinning of a nitride layer in the planarization process and inhibit the peripheral area of the nitride l...
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
07.01.2003
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The present invention relates to a method of manufacturing a semiconductor device having isolating oxide layers.
A method of manufacturing semiconductor device is provided which can minimize the thinning of a nitride layer in the planarization process and inhibit the peripheral area of the nitride layer from being excessively polished. The method of manufacturing semiconductor device includes the steps of: forming a nitride layer on a semiconductor substrate; patterning the nitride layer and etching the semiconductor substrate while masking with a pattern of the nitride layer to form a trench; depositing an oxide layer to fill the trench and cover the nitride layer; patterning a resist layer on the oxide layer; etching the oxide layer on the nitride layer; and planarizing the oxide layer, wherein the step of etching the oxide layer permits a thickness of the oxide layer to be left on the nitride layer. |
|---|