Semiconductor device, display device and method of fabricating the same

1. Field of the Invention A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from t...

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Bibliographic Details
Main Authors Hirano, Kiichi, Sotani, Naoya, Yamaji, Toshifumi, Morimoto, Yoshihiro, Yoneda, Kiyoshi
Format Patent
LanguageEnglish
Published 31.12.2002
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Summary:1. Field of the Invention A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.