Method for forming a thin dielectric layer

1. Field of the Invention The method disclosed herein comprises initially providing a tool comprised of a process chamber, a lid above the process chamber, an RF coil for assisting in generating a plasma in the chamber, a substrate support, and a power supply coupled to the substrate support. The me...

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Bibliographic Details
Main Authors Hause, Frederick N, Wieczorek, Karsten, Horstmann, Manfred
Format Patent
LanguageEnglish
Published 10.12.2002
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Summary:1. Field of the Invention The method disclosed herein comprises initially providing a tool comprised of a process chamber, a lid above the process chamber, an RF coil for assisting in generating a plasma in the chamber, a substrate support, and a power supply coupled to the substrate support. The method continues with the step of positioning a substrate in the tool adjacent the substrate support, introducing a noble gas into the chamber, and forming a layer of material above the substrate by sputtering the lid material by performing at least the following steps: applying approximately 200-300 watts of power to the RF coil at a frequency of approximately 400 KHz and applying approximately 20-60 watts of power to the substrate at a frequency of approximately 13.56 MHz.