Fabrication method for semiconductor integrated circuit devices and semiconductor integrated circuit device

The present invention relates to a method of fabrication of semiconductor integrated circuit devices and to a semiconductor integrated circuit device, particularly to a fabrication method and a semiconductor integrated circuit device having an alloy of silicon (Si) and germanium (Ge) (hereinafter, s...

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Bibliographic Details
Main Authors Yamazaki, Kazuo, Kuniyoshi, Shinji, Kusakari, Kousuke, Ikeda, Takenobu, Tadokoro, Masahiro
Format Patent
LanguageEnglish
Published 12.11.2002
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Summary:The present invention relates to a method of fabrication of semiconductor integrated circuit devices and to a semiconductor integrated circuit device, particularly to a fabrication method and a semiconductor integrated circuit device having an alloy of silicon (Si) and germanium (Ge) (hereinafter, simply referred to as SiGe) of polycrystal or single crystal. To improve the shape of a gate electrode having SiGe, after patterning a gate electrode G having an SiGe layer by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHFgas. Thereby, the gate electrode G can be formed without causing side etching at two side faces (SiGe layer ) of the gate electrode G.