Method for producing trenches for DRAM cell configurations

The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first ma...

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Bibliographic Details
Main Authors Brencher, Lothar, Stegememann, Maik, Rudolph, Uwe
Format Patent
LanguageEnglish
Published 05.11.2002
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