Method for producing trenches for DRAM cell configurations
The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first ma...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
05.11.2002
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Online Access | Get full text |
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Summary: | The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations.
The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first mask layer () and an underlying second mask layer () is used. A resist mask is applied to the mask layers (). The trenches are structured by etching processes, in which, in a first etching process, the first mask layer () is etched selectively with respect to the resist mask, and in a second etching process, the second mask layer () is etched selectively with respect to the first mask layer (). |
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