Method for producing trenches for DRAM cell configurations

The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first ma...

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Bibliographic Details
Main Authors Brencher, Lothar, Stegememann, Maik, Rudolph, Uwe
Format Patent
LanguageEnglish
Published 05.11.2002
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Summary:The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. The invention relates to a method for producing trenches for manufacturing storage capacitors in DRAM cell configurations. In the method, a two-stage hard mask having a first mask layer () and an underlying second mask layer () is used. A resist mask is applied to the mask layers (). The trenches are structured by etching processes, in which, in a first etching process, the first mask layer () is etched selectively with respect to the resist mask, and in a second etching process, the second mask layer () is etched selectively with respect to the first mask layer ().