Method of manufacturing embedded organic stop layer for dual damascene patterning

1. Field of Invention A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2...

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Main Authors Zhou, Mei Sheng, Sudijono, John Leonard, Gupta, Subhash, Roy, Sudipto Ranendra, Ho, Paul Kwok Keung, Xu, Yi, Chooi, Simon, Aliyu, Yakub
Format Patent
LanguageEnglish
Published 05.11.2002
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Summary:1. Field of Invention A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.