Pattern formation method

• Main Authors: Kishimura, Shinji, Katsuyama, Akiko, Sasago, Masaru
• Format: Patent
• Language: English
• Published: 05.11.2002

The present invention relates to a pattern formation method, and more particularly, it relates to a method of forming a resist pattern, used for forming a semiconductor device or a semiconductor integrated circuit on a semiconductor substrate, by using exposing light of a wavelength of a 1 nm through 180 nm band. A resist film is formed by applying, on a semiconductor substrate, a resist material containing a base polymer including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern.