Diamond barrier layer

• Main Authors: Catabay, Wilbur G, Wang, Zhihai
• Format: Patent
• Language: English
• Published: 29.10.2002

This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects. A method of forming an electrically conductive interconnect on a substrate. An interconnection feature is formed on the substrate, and a first barrier layer is deposited on the substrate. The first barrier layer consists essentially of a diamond film. A seed layer consisting essentially of copper is deposited on the substrate, and a conductive layer consisting essentially of copper is deposited on the substrate. Thus, by using a diamond film as the barrier layer, diffusion of the copper from the conductive layer into the material of the substrate is substantially reduced and preferably eliminated.