Diamond barrier layer
This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects. A method of forming an electrically conductive interconnect on a substrate....
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
29.10.2002
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| Online Access | Get full text |
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| Summary: | This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects.
A method of forming an electrically conductive interconnect on a substrate. An interconnection feature is formed on the substrate, and a first barrier layer is deposited on the substrate. The first barrier layer consists essentially of a diamond film. A seed layer consisting essentially of copper is deposited on the substrate, and a conductive layer consisting essentially of copper is deposited on the substrate. Thus, by using a diamond film as the barrier layer, diffusion of the copper from the conductive layer into the material of the substrate is substantially reduced and preferably eliminated. |
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