Forward body bias generation circuits based on diode clamps

This invention is generally related to the generation of a forward body bias (FBB) voltage for field effect transistors (FETs), and particularly to robust generation circuits that maintain a constant FBB despite variations in the manufacturing process, the operating temperature, and supply voltage....

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Bibliographic Details
Main Authors Bruneau, David W, Narendra, Siva G, De, Vivek K
Format Patent
LanguageEnglish
Published 22.10.2002
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Summary:This invention is generally related to the generation of a forward body bias (FBB) voltage for field effect transistors (FETs), and particularly to robust generation circuits that maintain a constant FBB despite variations in the manufacturing process, the operating temperature, and supply voltage. Various embodiments of a method for providing forward body bias (FBB) are disclosed. A first diode element is forward biased to a first voltage. A voltage proportional to the first diode voltage is converted into a current. A current is mirrored through a second diode element to generate a second diode voltage. A constant FBB based upon the second diode voltage is generated and applied to the bulk terminal of a field effect transistor (FET) of an integrated circuit die.