Etchant for use in a semiconductor processing method and system

1. Field of the Invention A method and system for processing a substrate in the presence of high purity CF. When processing oxides and dielectrics in a gas plasma processing system, CFis used in combination with a carrier gas (e.g., Ar) and one or more of CO and O. When using a silicon nitride (SiN)...

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Bibliographic Details
Main Authors Yamada, Masahiro, Ito, Youbun, Inazawa, Kouichiro, Toure, Abron, Hinata, Kunihiko, Sakima, Hiromi
Format Patent
LanguageEnglish
Published 15.10.2002
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Summary:1. Field of the Invention A method and system for processing a substrate in the presence of high purity CF. When processing oxides and dielectrics in a gas plasma processing system, CFis used in combination with a carrier gas (e.g., Ar) and one or more of CO and O. When using a silicon nitride (SiN) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.