Sputtering method for forming an aluminum or aluminum alloy fine wiring pattern

1. Field of the Invention A method of forming a fine wiring pattern by sputtering and patterning which is characterized in that the potential difference between the anode and cathode in the sputtering apparatus is lower than 570V. The resulting fine wiring pattern is free of defects due to splash. T...

Full description

Saved in:
Bibliographic Details
Main Authors Mizouchi, Kiyotsugu, Tsuji, Hiroshi
Format Patent
LanguageEnglish
Published 08.10.2002
Online AccessGet full text

Cover

Loading…