Sputtering method for forming an aluminum or aluminum alloy fine wiring pattern
1. Field of the Invention A method of forming a fine wiring pattern by sputtering and patterning which is characterized in that the potential difference between the anode and cathode in the sputtering apparatus is lower than 570V. The resulting fine wiring pattern is free of defects due to splash. T...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
08.10.2002
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| Online Access | Get full text |
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| Summary: | 1. Field of the Invention
A method of forming a fine wiring pattern by sputtering and patterning which is characterized in that the potential difference between the anode and cathode in the sputtering apparatus is lower than 570V. The resulting fine wiring pattern is free of defects due to splash. This method is effective particularly in the production of array substrates for the flat-panel display device which needs aluminum fine lines to meet the requirement for finer pixels and larger display area. |
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