Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
The present invention relates to integrated circuits (ICs), and more particular to a method of fabricating an IC which includes at least a low-dielectric constant, k, interlevel dielectric film having improved adhesion, low-defect density and enhanced electrical properties associated therewith. A su...
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Format | Patent |
Language | English |
Published |
24.09.2002
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Abstract | The present invention relates to integrated circuits (ICs), and more particular to a method of fabricating an IC which includes at least a low-dielectric constant, k, interlevel dielectric film having improved adhesion, low-defect density and enhanced electrical properties associated therewith.
A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds. |
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AbstractList | The present invention relates to integrated circuits (ICs), and more particular to a method of fabricating an IC which includes at least a low-dielectric constant, k, interlevel dielectric film having improved adhesion, low-defect density and enhanced electrical properties associated therewith.
A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds. |
Author | Hedrick, Jeffrey Curtis Eckert, Andrew Robert Liniger, Eric Gerhard Simonyi, Eva Erika Lee, Kang-Wook Hay, John C |
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References | Knotter et al. (5622896) 19970400 Brewer et al. (4950583) 19900800 Yokotsuka et al. (5905117) 19990500 Matsuzawa et al. (6071830) 20000600 Brewer et al. (4732858) 19880300 |
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Snippet | The present invention relates to integrated circuits (ICs), and more particular to a method of fabricating an IC which includes at least a low-dielectric... |
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Title | Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
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