Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density

The present invention relates to integrated circuits (ICs), and more particular to a method of fabricating an IC which includes at least a low-dielectric constant, k, interlevel dielectric film having improved adhesion, low-defect density and enhanced electrical properties associated therewith. A su...

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Bibliographic Details
Main Authors Eckert, Andrew Robert, Hay, John C, Hedrick, Jeffrey Curtis, Lee, Kang-Wook, Liniger, Eric Gerhard, Simonyi, Eva Erika
Format Patent
LanguageEnglish
Published 24.09.2002
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Summary:The present invention relates to integrated circuits (ICs), and more particular to a method of fabricating an IC which includes at least a low-dielectric constant, k, interlevel dielectric film having improved adhesion, low-defect density and enhanced electrical properties associated therewith. A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.