Method for detecting end point of plasma etching, and plasma etching apparatus
The present invention relates to methods for detecting the end point of plasma etching and to plasma etching devices which are applicable to, for example, production of semiconductor devices. Certain embodiments provide a plasma etching apparatus and a method for detecting the end point of plasma et...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
10.09.2002
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| Online Access | Get full text |
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| Summary: | The present invention relates to methods for detecting the end point of plasma etching and to plasma etching devices which are applicable to, for example, production of semiconductor devices.
Certain embodiments provide a plasma etching apparatus and a method for detecting the end point of plasma etching, which can more accurately detect the end point of plasma etching. A radiofrequency wave generated in a radiofrequency generating system propagates through a lead line and is applied to a cathode in a plasma chamber . Plasma thereby is generated in the plasma chamber and selectively etches a semiconductor wafer . A RF probe measures the voltage and current of the radiofrequency wave flowing in the lead line . A determination system may determine the end point of the plasma etching on the basis of either the voltage or current, whichever changes first. |
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