Ionized metal plasma deposition process having enhanced via sidewall coverage

• Main Authors: Klatt, Jeffrey, Norasetthekul, Somchintana
• Format: Patent
• Language: English
• Published: 27.08.2002

The present invention is generally directed to the manufacture of a semiconductor device. In particular, the present invention relates to a process that provides for enhancement of contact sidewall coverage of refractory metal nitrides. A method for depositing an adhesion layer in a contact region on a semiconductor substrate provides for sufficient coverage on the bottom and sidewalls of the contact region. In an example embodiment, a contact region having a bottom and sidewalls has a first coat of the adhesion layer deposited thereon at a thickness greater than the thickness on the sidewall. To compensate for the narrower adhesion layer thickness on the sidewalls, a second coat of the adhesion layer is deposited so that the second coat on the sidewalls is at a thickness greater than the second coat thickness on the bottom. The adhesion layer is titanium nitride although other materials may be used as well.