Threshold voltage generation circuit

• Main Authors: Grossnickle, Vaughn J, Narendra, Siva G, De, Vivek K
• Format: Patent
• Language: English
• Published: 13.08.2002

The present invention relates generally to voltage reference generation circuits, and more specifically to the generation of voltages related to transistor threshold voltages. A threshold voltage generation circuit includes a control transistor, one or more load transistors, and a current mirror. The load transistors are diode-connected transistors that are operated in saturation. The source-to-gate voltage of the load transistors approximates the threshold voltage of the transistors over process and temperature. The operation of the circuit is affected by choosing a bias voltage for the control transistor, the sizes of the control transistor and load transistors, and the ratio of transistor sizes within the current mirror.