Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film

• Main Author: Endo, Shunichi
• Format: Patent
• Language: English
• Published: 06.08.2002

This invention relates to a semiconductor device using a fluorine-added carbon film as an inter-layer insulating film, and to a manufacturing method thereof. In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiHgas and CHgas, are excited into plasma to stack a SiC film [] as the contact layer on the top surface of a SiOfilm []. After that, switching of deposition gases is conducted for about 1 second by introducing SiHgas, CHgas, CFgas and CHgas. Subsequently, CF film deposition gases, such as CFgas and CHgas, for example, are excited into plasma to deposit[e] a CF film [] on the SiC film []. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si-C bonds are produced near the boundary between the SiC film [] and the CF film [] across these films, and they enhance adhesion between these films and hence increase adhesion of the SiOfilm [] and the CF film [