Method to build multi level structure

The invention relates to semiconductor devices. In particular, the invention relates to a multi-level metal structure and a process for forming the multi-level metal structure. A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is...

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Bibliographic Details
Main Authors Uzoh, Cyprian E, Edelstein, Daniel C, Faltermeier, Cheryl, Locke, Peter S
Format Patent
LanguageEnglish
Published 02.07.2002
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Summary:The invention relates to semiconductor devices. In particular, the invention relates to a multi-level metal structure and a process for forming the multi-level metal structure. A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.