Test structures for substrate etching
This invention relates to parametric test structures for integrated circuits, more particularly, this invention relates to a test structure to measure the depth of etching in resistive substrates. A test structure determines the trench depth from etching in a resistive substrate. The test structure...
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
28.05.2002
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | This invention relates to parametric test structures for integrated circuits, more particularly, this invention relates to a test structure to measure the depth of etching in resistive substrates.
A test structure determines the trench depth from etching in a resistive substrate. The test structure has a first contact and a second contact to the substrate. Between the first and second contact is disposed an etch window. A measurement of resistance between the first contact and the second contact is indicative of the depth of etching in the etch window. |
|---|