Magnetic element with improved field response and fabricating method thereof

The present invention relates to magnetic elements for information storage and/or sensing and a fabricating method thereof, and more particularly, to a method of fabricating and thus defining the magnetic element to improve magnetic field response. An improved and novel fabrication method for a magn...

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Bibliographic Details
Main Authors Chen, Eugene Youjun, Slaughter, Jon Michael, Shi, Jing
Format Patent
LanguageEnglish
Published 23.04.2002
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Summary:The present invention relates to magnetic elements for information storage and/or sensing and a fabricating method thereof, and more particularly, to a method of fabricating and thus defining the magnetic element to improve magnetic field response. An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element () including a first electrode () , a second electrode () and a spacer layer (). The first electrode () includes a fixed ferromagnetic layer () having a thickness t. A second electrode () is included and comprises a free ferromagnetic layer () having a thickness t. A spacer layer () is located between the fixed ferromagnetic layer () and the free ferromagnetic () layer, the spacer layer () having a thickness t, where 0.25t<t<2t, thereby producing near zero magnetic field at the free ferromagnetic layer ().