Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same

• Main Authors: Adetutu, Olubunmi O, Lii, Yeong-Jyh T, Grudowski, Paul A
• Format: Patent
• Language: English
• Published: 09.04.2002

This invention pertains, in general, to semiconductor processing and, more specifically, to forming an integrated circuit device with a contact hole. Insulating layers between transistors that are very close together may have voids. When contacts are formed in these areas between these close transistors, the contact hole is formed at the void location. These voids may extend between the contact locations that are close together so that the deposition of the conductive material into these contact holes may extend sufficiently into the void to short two such contacts. This is prevented by placing a liner in the contact hole, which constricts the void size in the contact hole, prior to depositing the conductive material. This restricts ingress of conductive material into the void. This prevents the void from being an unwanted conduction path between two contacts that are in close proximity. The bottoms of the contact holes are etched to remove the liner prior to depositing the conductive material.