Method of planarization using selecting curing of SOG layer

1. Field of the Invention A method for planarizing an interlayer dielectric layer formed on a semiconductor substrate having a step, using wet etch, by depositing first and second layers on the semiconductor substrate and selectively curing the second layer in the lower area using electron beams (E-...

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Bibliographic Details
Main Authors Shin, Hong-jae, Goo, Ju-seon
Format Patent
LanguageEnglish
Published 09.04.2002
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Summary:1. Field of the Invention A method for planarizing an interlayer dielectric layer formed on a semiconductor substrate having a step, using wet etch, by depositing first and second layers on the semiconductor substrate and selectively curing the second layer in the lower area using electron beams (E-beams). The second layer, e.g., an SOG layer formed of HSQ, has a lower etch rate during the wet etch in the cured area, to thereby easily planarize the substrate of the interlayer dielectric layer.