Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps

The present invention relates to the deposition of high density plasma chemical vapor deposition (HDPCVD) oxides, and more particularly, to a method of depositing HDPCVD oxide without the formation of seams, defects, or other discontinuities in high aspect ratio gap filling applications. A method of...

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Bibliographic Details
Main Authors Shan, Jessie C, Huang, Chang-Kuei, Yang, Steve H. Y
Format Patent
LanguageEnglish
Published 02.04.2002
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Summary:The present invention relates to the deposition of high density plasma chemical vapor deposition (HDPCVD) oxides, and more particularly, to a method of depositing HDPCVD oxide without the formation of seams, defects, or other discontinuities in high aspect ratio gap filling applications. A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.