Method and device for treating a semiconductor surface
This invention relates to surface treatment of semiconductors and relates to a method and a device for treating a surface of a semiconductor as well as a semiconductor. It finds applications in the field of surface cleaning, etching and nano-manufacturing. The invention concerns a method for treatin...
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| Format | Patent |
| Language | English |
| Published |
12.03.2002
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| Online Access | Get full text |
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| Summary: | This invention relates to surface treatment of semiconductors and relates to a method and a device for treating a surface of a semiconductor as well as a semiconductor. It finds applications in the field of surface cleaning, etching and nano-manufacturing.
The invention concerns a method for treating a surface () of a semiconductor (B) and a corresponding treating device. The surface is made by first molecules of the semiconductor having external bonds saturated with hydrogen. The method consists in sending a beam ()of ions highly charged and with low energy towards the surface, and applying thereto a deceleration voltage Uin the proximity of the surface. In this way, the ions extract without making contact the electrons of the first molecules, releasing the hydrogen atoms saturating the corresponding external bonds. Then a product saturating the pendant external bonds is sent so as to form second molecules of an insulating compound. The invention is useful for surface cleaning, etching and nano-manufacturing. |
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