Method and structure of high and low K buried oxide for SOI technology

1. Field of the Invention A method and structure for forming an integrated circuit wafer comprises forming a substrate having first and second portions, depositing a first insulator over the substrate, patterning the first insulator such that the first insulator remains only over the first portion,...

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Bibliographic Details
Main Authors Gauthier, Jr., Robert J, Schepis, Dominic J, Voldman, Steven H
Format Patent
LanguageEnglish
Published 05.03.2002
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Summary:1. Field of the Invention A method and structure for forming an integrated circuit wafer comprises forming a substrate having first and second portions, depositing a first insulator over the substrate, patterning the first insulator such that the first insulator remains only over the first portion, depositing a second insulator over substrate (the first insulator has different thermal dissipation characteristics than the second insulator), polishing the second insulator to form a planar surface, and attaching a silicon film over the first insulator and the second insulator.