Method of improving edge recess problem of shallow trench isolation

1. Field of the Invention A method for improving an edge recess of a shallow trench isolation (STI). A SiOlayer with gap-filling ability is formed to fill the edge recess at the top corner of the STI. A part of the SiOlayer on the substrate is then removed, leaving a part of the SiOlayer to fill the...

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Bibliographic Details
Main Author Sung, Kuo-Tung
Format Patent
LanguageEnglish
Published 05.03.2002
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Summary:1. Field of the Invention A method for improving an edge recess of a shallow trench isolation (STI). A SiOlayer with gap-filling ability is formed to fill the edge recess at the top corner of the STI. A part of the SiOlayer on the substrate is then removed, leaving a part of the SiOlayer to fill the edge recess and to cover a sidewall of the substrate at the edge.