Exposure apparatus and method

• Main Authors: Noguchi, Minori, Kenbo, Yukio, Oshida, Yoshitada, Shiba, Masataka, Yoshitaka, Yasuhiro, Murayama, Makoto
• Format: Patent
• Language: English
• Published: 01.01.2002

The present invention relates to an exposure method and apparatus therefor, an exposure system and a mask circuit pattern inspection system, which eliminate an influence of interference light generated in an extremely fine circuit pattern formed on a mask, so that an image is formed with a high resolving power on a substrate through a projection lens and exposed and, further, wherein the light source is an excimer laser light source. A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.