Composite low-k dielectric structure

A method of forming a composite intermetal dielectric structure is provided. An initial intermetal dielectric structure is provided, which includes a first dielectric layer and two conducting lines. The two conducting lines are located in the first dielectric layer. A portion of the first dielectric...

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Bibliographic Details
Main Authors Kim, Sun-Oo, Naujok, Markus, Cowley, Andy
Format Patent
LanguageEnglish
Published 09.12.2004
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Summary:A method of forming a composite intermetal dielectric structure is provided. An initial intermetal dielectric structure is provided, which includes a first dielectric layer and two conducting lines. The two conducting lines are located in the first dielectric layer. A portion of the first dielectric layer is removed between the conducting lines to form a trench. The trench is filled with a second dielectric material. The second dielectric material is a low-k dielectric having a dielectric constant less than that of the first dielectric layer.