Insulator structure and method for producing insulator structures in a semiconductor substrate
In order to produce insulator structures ( 8 ), insulator trenches ( 21 ) with aspect ratios of greater than 4:1 are introduced into a semiconductor substrate ( 1 ) from a substrate surface ( 10 ) and filled with an insulator filling ( 3 ). The insulator filling ( 3 ) is formed from a plurality of p...
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| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
02.12.2004
|
| Online Access | Get full text |
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| Summary: | In order to produce insulator structures (
8
), insulator trenches (
21
) with aspect ratios of greater than 4:1 are introduced into a semiconductor substrate (
1
) from a substrate surface (
10
) and filled with an insulator filling (
3
). The insulator filling (
3
) is formed from a plurality of portions (
31, 32, 33, 34
) which are deposited successively in situ in an HDP/CVD process chamber in the course of an HDP/CVD deposition process. A main layer (
33
) is provided made from fluorine-doped silicon oxide with good filling properties. A barrier layer (
32
) is formed directly before the deposition of the main layer (
33
), said barrier layer preventing an outgassing of the fluorine from the fluorine-doped silicon oxide (
33
), an interaction of the fluorine with the semiconductor substrate (
1
) and a formation of defect areas (
6
) with oxide of low quality in the area of the insulator filling (
3
). The barrier (
32
) makes it possible to form nondegrading p-channel transistors (
73
) in the area of the substrate surface (
10
). An additional layer (
31
) and a termination layer (
34
) respectively effect an adaptation and linking of the main layer (
33
) and of the barrier layer (
32
) to preceeding and succeeding process steps. |
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