Critical dimension control of printed features using non-printing fill patterns

Non-uniformity and image shortening are substantially reduced in an image printed on a substrate using a photolithographic mask in which the mask pattern includes at least one lines and spaces array adjacent to at least one clear region. At least one line feature is incorporated within the clear reg...

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Bibliographic Details
Main Authors Wu, Chung-Hsi, Brunner, Timothy, Butt, Shahid, Speno, Patrick
Format Patent
LanguageEnglish
Published 04.11.2004
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Summary:Non-uniformity and image shortening are substantially reduced in an image printed on a substrate using a photolithographic mask in which the mask pattern includes at least one lines and spaces array adjacent to at least one clear region. At least one line feature is incorporated within the clear region of the mask pattern and is disposed in proximity to the lines and spaces array. The line feature has a line width that is smaller than a minimum resolution of the optical projection system. The image is printed by illuminating the photolithographic mask and projecting light transmitted through the photolithographic mask onto the substrate using the optical projection system.