Method for fabricating a dual damascene structure using a single photoresist layer
A photo-sensitive material layer is formed over a semiconductor substrate. The photo-sensitive material layer is exposed to a first radiation having a maximum intensity at a first wavelength to form a first latent pattern in the photo-sensitive material layer. The photo-sensitive material layer is t...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
16.09.2004
|
Online Access | Get full text |
Cover
Loading…
Summary: | A photo-sensitive material layer is formed over a semiconductor substrate. The photo-sensitive material layer is exposed to a first radiation having a maximum intensity at a first wavelength to form a first latent pattern in the photo-sensitive material layer. The photo-sensitive material layer is then exposed to a second radiation having a maximum intensity at a second wavelength to form a second latent pattern in the photo-sensitive material layer. The first latent pattern and the second latent pattern in the photo-sensitive material layer are then simultaneously removed. |
---|