Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device

Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) ( 26 ). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performe...

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Bibliographic Details
Main Authors Shimoda, Takahiro, Komiyama, Kiyoshi, Nishikawa, Hiroshi
Format Patent
LanguageEnglish
Published 12.08.2004
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Summary:Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) ( 26 ). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.