Non-volatile semiconductor storage device and production method thereof
In a method for producing non-volatile semiconductor storage devices, a non-volatile semiconductor storage devices comprises a memory array ( 10 ) that includes a plurality of non-volatile storage elements and a plurality of spare storage elements, each of which enables information to be written/era...
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| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
29.07.2004
|
| Online Access | Get full text |
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| Summary: | In a method for producing non-volatile semiconductor storage devices, a non-volatile semiconductor storage devices comprises a memory array (
10
) that includes a plurality of non-volatile storage elements and a plurality of spare storage elements, each of which enables information to be written/erased therein/therefrom electrically, and a storage element, if it is decided to be defective during a write operation, is replaced with one of the spare storage elements (
10
a
), and information related to the defective storage element is stored in a predetermined area (
10
b
) provided in the memory array. In the method, if the defective storage element is detected by a test, the information related to each detected defective storage element is not stored in the predetermined area of the memory array, and the one in which a rate of the defective storage elements detected by the test is under a predetermined value is extracted as a non-defective product. |
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