Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes a chamber in which a plate to be processed is contained, an introductory port via which a hydrogen-atom-containing gas is guided into the chamber, a lower electrode on which the plate is laid in the chamber, an upper electrode disposed opposite to the lower ele...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
29.07.2004
|
Online Access | Get full text |
Cover
Loading…
Summary: | A plasma processing apparatus includes a chamber in which a plate to be processed is contained, an introductory port via which a hydrogen-atom-containing gas is guided into the chamber, a lower electrode on which the plate is laid in the chamber, an upper electrode disposed opposite to the lower electrode and causing electric discharge in the chamber to produce a plasma, a power supply which supplies voltage between the lower and upper electrodes, and a metal oxide structural body disposed in a part in the chamber, the metal oxide structural body being reduced when the hydrogen-atom-containing gas is introduced. |
---|