Nanopore forming material for forming insulating film for semiconductors and low dielectric insulating film comprising the same

The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semic...

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Main Authors Kwon, Won-Jong, Ko, Min-Jin, Kang, Gwi-Gwon, Shin, Don-Seok, Moon, Myung-Sun, Kang, Jung-Won, Nam, Hae-Young, Kim, Young-Duk, Choi, Bum-Gyu
Format Patent
LanguageEnglish
Published 01.07.2004
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Summary:The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof. The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.