Method to fabricate a square word line poly spacer
A new method is provided for the etch of polysilicon spacers that form part of split-gate flash memory devices. Under a first embodiment of the invention, a conventional polysilicon gate etch is augmented with an oxide based plasma treatment of the layer of polysilicon that is being etched as part o...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
24.06.2004
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Online Access | Get full text |
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Summary: | A new method is provided for the etch of polysilicon spacers that form part of split-gate flash memory devices. Under a first embodiment of the invention, a conventional polysilicon gate etch is augmented with an oxide based plasma treatment of the layer of polysilicon that is being etched as part of this etch. Under a second embodiment of the invention, a conventional five step etch procedure is replaced with a three step etch procedure that is based on SiON or SiN hardmask technology |
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