GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant s...

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Bibliographic Details
Main Authors Lee, Kyo-Yeol, Kwak, Joon-Seop, Cho, Jae-Hee, Chae, Su-Hee
Format Patent
LanguageEnglish
Published 01.04.2004
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Summary:A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.