Fabrication method for semiconductor integrated circuit device
To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15 G having an SiGe layer 15 b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF 3 gas. Thereby, the gate electrode 15 G can be formed without causing sid...
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| Main Authors | , , , , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
19.02.2004
|
| Online Access | Get full text |
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| Abstract | To improve the shape of a gate electrode having SiGe, after patterning a gate electrode
15
G having an SiGe layer
15
b
by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF
3
gas. Thereby, the gate electrode
15
G can be formed without causing side etching at two side faces (SiGe layer
15
b
) of the gate electrode
15
G. |
|---|---|
| AbstractList | To improve the shape of a gate electrode having SiGe, after patterning a gate electrode
15
G having an SiGe layer
15
b
by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF
3
gas. Thereby, the gate electrode
15
G can be formed without causing side etching at two side faces (SiGe layer
15
b
) of the gate electrode
15
G. |
| Author | Yamazaki, Kazuo Ikeda, Takenobu Tadokoro, Masahiro Kuniyoshi, Shinji Kusakari, Kousuke |
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| Snippet | To improve the shape of a gate electrode having SiGe, after patterning a gate electrode
15
G having an SiGe layer
15
b
by a dry etching process, a plasma... |
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| Title | Fabrication method for semiconductor integrated circuit device |
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